X-ray lithography source

Patent · Tue Jan 01 00:00:00 EST 1991

OSTI ID:868109

Piestrup, Melvin A ^[1]; Boyers, David G ^[2]; Pincus, Cary ^[3]

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1. Woodside, CA
2. Mountain View, CA
3. Sunnyvale, CA

A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

• Research Organization: Adelphia Technology Inc
• DOE Contract Number: AC03-85ER80234
• Assignee: Adelphi Technology Inc. (Palo Alto, CA)
• Patent Number(s): US 5077774
• OSTI ID: 868109
• Country of Publication: United States
• Language: English

Related Subjects

x-ray
lithography
source
high-intensity
inexpensive
production
integrated
circuits
foil
stacks
bombarded
high-energy
electron
beam
25
250
mev
produce
flux
soft
x-rays
500
kev
methods
increasing
total
power
section
uniform
described
obtaining
desired
x-ray-beam
field
size
optimum
frequency
spectrum
elminating
neutron
method
plurality
station
operation
makes
process
efficient
economical
satisfying
issues
transition
radiation
exellent
moderate-priced
x-ray lithography
x-ray source
x-ray beam
electron beam
neutron flux
integrated circuits
integrated circuit
soft x-ray
energy electron
frequency spectrum
transition radiation
soft x-rays
high-energy electron
inexpensive x-ray
desired x-ray
/378/