X-ray lithography source

Patent · Tue Dec 31 04:00:00 EST 1991

OSTI ID:7083850

Piestrup, M A; Boyers, D G; Pincus, C

A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

• Research Organization: Adelphia Technology Inc
• DOE Contract Number: AC03-85ER80234
• Assignee: Adelphi Technology Inc., Palo Alto, CA (United States)
• Patent Number(s): A; US 5077774
• Application Number: PPN: US 7-570210
• OSTI ID: 7083850
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
BEAM OPTICS
BEAMS
DESIGN
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELECTRONIC CIRCUITS
EQUIPMENT
FABRICATION
INTEGRATED CIRCUITS
IONIZING RADIATIONS
LEPTON BEAMS
MICROELECTRONIC CIRCUITS
PARTICLE BEAMS
RADIATION SOURCES
RADIATIONS
SOFT X RADIATION
TRANSITION RADIATION
X RADIATION
X-RAY EQUIPMENT
X-RAY SOURCES