X-ray lithography source

Patent · Tue Jan 01 04:00:00 EST 1991

OSTI ID:868109

Piestrup, Melvin A ^[1]; Boyers, David G ^[2]; Pincus, Cary ^[3]

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1. Woodside, CA
2. Mountain View, CA
3. Sunnyvale, CA

A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

• Research Organization: Adelphia Technology Inc
• DOE Contract Number: AC03-85ER80234
• Assignee: Adelphi Technology Inc. (Palo Alto, CA)
• Patent Number(s): US 5077774
• OSTI ID: 868109
• Country of Publication: United States
• Language: English

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economical
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electron
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elminating
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exellent
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frequency
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integrated
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neutron
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section
size
soft
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soft x-rays
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total
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transition radiation
uniform
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x-ray beam
x-ray lithography
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x-ray-beam
x-rays