Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers
Patent
·
OSTI ID:867565
- Oak Ridge, TN
Refractory oxide crystals suitable for use in tunable lasers and a method for preparing the same are provided. The crystals are characterized by high quantum efficiency, high thermal stability, good crystal transparency, and a high percentage of useful luminescence. The method for preparation of the crystals involves removing substantially all the hydrogen, thermochemically reducing the crystal's oxygen content to produce oxygen (anion) vacancy defects, and subsequently irradiating the crystal with electrons to inactivate trace H.sup.- ions so that an increased amount of short lived F.sup.+ luminescence is produced when the crystal is optically excited.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN
- Assignee:
- United States of America as represented by Department of Energy (Washington, DC)
- Patent Number(s):
- US 4963755
- OSTI ID:
- 867565
- Country of Publication:
- United States
- Language:
- English
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