Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers

Patent · Tue Oct 16 00:00:00 EDT 1990

OSTI ID:5726208

Chen, Y

Refractory oxide crystals suitable for use in tunable leasers and a method for preparing the same are presented. The crystals are characterized by high quantum efficiency, high thermal stability, good crystal transparency, and a high percentage of useful luminescence. The method for preparation of the crystals involves removing substantially all the hydrogen, thermochemically reducing the crystal's oxygen content to produce oxygen (anion) vacancy defects, and subsequently irradiating the crystal with electrons to inactivate trace H {minus} ions so that an increased amount of short lived F+ luminescence is produced when the crystal is optically excited.

• Assignee: Dept. of Energy, Washington, DC (USA)
• Patent Number(s): US 4963755; A
• Application Number: PPN: US 7-243534
• OSTI ID: 5726208
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
EFFICIENCY
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
HYDROGEN IONS
IONS
IRRADIATION
LASERS
LEPTONS
LUMINESCENCE
OXIDES
OXYGEN COMPOUNDS
POINT DEFECTS
QUANTUM EFFICIENCY
REFRACTORIES
VACANCIES