P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same

Patent · Tue Oct 04 00:00:00 EDT 1988

OSTI ID:866730

Guha, Subhendu ^[1]; Ovshinsky, Stanford R ^[2]

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1. Troy, MI
2. Bloomfield Hills, MI

An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

• DOE Contract Number: Zb-7-06003-4
• Assignee: Energy Conversion Devices, Inc. (Troy, MI)
• Patent Number(s): US 4775425
• Application Number: 07/077,722
• OSTI ID: 866730
• Country of Publication: United States
• Language: English

Related Subjects

n-type
microcrystalline
semiconductor
alloy
material
including
band
gap
widening
elements
devices
utilizing
element
method
fabricating
p-type
electronic
photovoltaic
incorporating
materials
microcrystalline semiconductor
photovoltaic devices
band gap
photovoltaic device
material including
crystalline semiconductor
alloy material
semiconductor alloy
widening element
gap widening
devices incorporating
devices utilizing
p-type material
p-type microcrystalline
n-type microcrystalline
widening elements
type materials
including band
type material
/136/252/257/420/