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Title: Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements

Abstract

A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.

Inventors:
 [1];  [2]
  1. Troy, MI
  2. Bloomfield Hills, MI
Publication Date:
OSTI Identifier:
867232
Patent Number(s):
US 4891330
Application Number:
07/174,267
Assignee:
Energy Conversion Devices, Inc. (Troy, MI)
DOE Contract Number:  
ZB-7-060003-4
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; fabricating; n-type; p-type; microcrystalline; semiconductor; alloy; material; including; band; gap; widening; elements; doped; element; glow; discharge; deposition; process; subjecting; precursor; mixture; diluent; gas; absence; magnetic; field; sufficient; strength; induce; electron; cyclotron; resonance; precursor mixture; microcrystalline semiconductor; electron cyclotron; band gap; magnetic field; glow discharge; deposition process; material including; cyclotron resonance; sufficient strength; crystalline semiconductor; alloy material; semiconductor alloy; widening element; gap widening; p-type microcrystalline; diluent gas; widening elements; including band; fabricating doped; /438/136/148/427/

Citation Formats

Guha, Subhendu, and Ovshinsky, Stanford R. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements. United States: N. p., 1990. Web.
Guha, Subhendu, & Ovshinsky, Stanford R. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements. United States.
Guha, Subhendu, and Ovshinsky, Stanford R. Fri . "Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements". United States. https://www.osti.gov/servlets/purl/867232.
@article{osti_867232,
title = {Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements},
author = {Guha, Subhendu and Ovshinsky, Stanford R},
abstractNote = {A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {2}
}

Patent:

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