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Title: Composition/bandgap selective dry photochemical etching of semiconductor materials

Abstract

A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

Inventors:
 [1];  [2]
  1. (Edgewood, NM)
  2. (Albuquerque, NM)
Publication Date:
Research Org.:
AT & T CORP
OSTI Identifier:
866167
Patent Number(s):
US 4648938
Assignee:
United States of America as represented by United States (Washington, DC) SNL
DOE Contract Number:
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
composition; bandgap; selective; dry; photochemical; etching; semiconductor; materials; method; selectively; photochemically; material; direct; presence; substantially; etched; comprises; subjecting; photon; flux; gaseous; etchant; conditions; ineffective; chemical; photons; energy; whereby; dry etching; chemical etching; semiconductor materials; semiconductor material; photon flux; photochemical etching; selectively photochemically; comprises subjecting; material substantially; selective dry; chemically etched; direct bandgap; photochemically dry; dry photochemical; /438/

Citation Formats

Ashby, Carol I. H., and Dishman, James L. Composition/bandgap selective dry photochemical etching of semiconductor materials. United States: N. p., 1987. Web.
Ashby, Carol I. H., & Dishman, James L. Composition/bandgap selective dry photochemical etching of semiconductor materials. United States.
Ashby, Carol I. H., and Dishman, James L. 1987. "Composition/bandgap selective dry photochemical etching of semiconductor materials". United States. doi:. https://www.osti.gov/servlets/purl/866167.
@article{osti_866167,
title = {Composition/bandgap selective dry photochemical etching of semiconductor materials},
author = {Ashby, Carol I. H. and Dishman, James L.},
abstractNote = {A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 1987,
month = 1
}

Patent:

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  • A method is described of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap E/sub g1/ in the presence of a second semiconductor material of a different composition and direct bandgap E/sub g2/, wherein E/sub g2/>E/sub g1/. The second semiconductor material is not substantially etched during the method, comprising subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where the etchant would be ineffective for chemical etching of either material where the photons are not present, the photons being of an energy greater than E/sub g1/ butmore » less than E/sub g2/, whereby the first semiconductor material is photochemically etched and the second material is substantially not etched.« less
  • Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater thanmore » Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.« less
  • A method is described of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from the first material. The second material is not substantially etched during the method which comprises: subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where the etchant would be ineffective for chemical etching of either material where the photons not present, the conditions also being such that the resultant electronic structuremore » of the first semiconductor material under the photon flux is sufficient for the first material to undergo substantial photochemical etching under the conditions. The conditions also are such that the resultant electronic structure of the second semiconductor material under the photon flux is not sufficient for the second material to undergo substantial photochemical etching under the conditions.« less
  • A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the firstmore » semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.« less
  • Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronicmore » structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p-type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.« less