Dopant type and/or concentration selective dry photochemical etching of semiconductor materials
- Edgewood, NM
- Albuquerque, NM
A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.
- Research Organization:
- AT&T
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4648936
- OSTI ID:
- 866166
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
type
concentration
selective
dry
photochemical
etching
semiconductor
materials
method
selectively
photochemically
material
composition
presence
substantially
etched
comprises
subjecting
photon
flux
energy
respective
direct
bandgaps
gaseous
chemical
etchant
conditions
ineffective
photons
resultant
electronic
structure
sufficient
undergo
substantial
preferred
mode
subjected
bias
voltage
suppresses
n-
p-
n-type
respectively
heavily
doped
p-type
n-type material
dry etching
heavily doped
chemical etching
semiconductor materials
semiconductor material
bias voltage
photon flux
photochemical etching
selectively photochemically
preferred mode
comprises subjecting
material substantially
selective dry
p-type material
p- type
direct bandgap
type materials
type material
photochemically dry
dry photochemical
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