Layered ultra-thin coherent structures used as electrical resistors having low temperature coefficient of resistivity

Patent · 31 December 1983

OSTI ID:865051

Werner, Thomas R ^[1]; Falco, Charles M ^[2]; Schuller, Ivan K ^[3]

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1. Argonne, IL
2. Tucson, AZ
3. Woodridge, IL

A thin film resistor having a controlled temperature coefficient of resistance (TCR) ranging from negative to positive degrees kelvin and having relatively high resistivity. The resistor is a multilayer superlattice crystal containing a plurality of alternating, ultra-thin layers of two different metals. TCR is varied by controlling the thickness of the individual layers. The resistor can be readily prepared by methods compatible with thin film circuitry manufacturing techniques.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• DOE Contract Number: W-31109-ENG-38
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4454495
• OSTI ID: 865051
• Country of Publication: United States
• Language: English

Related Subjects

/338/505/
alternating
circuitry
coefficient
coherent
compatible
containing
controlled
controlled temperature
controlling
crystal
crystal containing
degrees
degrees kelvin
dual layer
electrical
film
film circuit
film resistor
individual
individual layers
kelvin
layer superlattice
layered
layers
manufacturing
manufacturing techniques
metals
methods
multilayer
negative
plurality
positive
prepared
ranging
readily
readily prepared
relatively
resistance
resistivity
resistor
resistors
structures
superlattice
superlattice crystal
tcr
techniques
temperature
temperature coefficient
thickness
ultra-thin
varied