Lattice constant grading in the Al.sub.y Ca.sub.1-y As.sub.1-x Sb.sub.x alloy system
Patent
·
OSTI ID:863780
- Palo Alto, CA
Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5.mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photovoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of the growing layer.
- Assignee:
- Varian Associates, Inc. (Palo Alto, CA)
- Patent Number(s):
- US 4246050
- OSTI ID:
- 863780
- Country of Publication:
- United States
- Language:
- English
Similar Records
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Patent
·
Mon Dec 31 23:00:00 EST 1979
·
OSTI ID:863540
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Patent
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Lattice constant grading in the Al[sub y]Ga[sub 1[minus]y]As[sub 1[minus]x]Sb[sub x] alloy system
Patent
·
Mon Mar 24 23:00:00 EST 1980
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Related Subjects
/117/136/438/
1-x
1-y
74
accomplished
algaassb
alloy
atomic
atomic percent
bandgap
compositional
compositional intermediary
concentration
constant
constant grading
constituent
cooling
cooling procedure
decreases
defects
desired
device
dislocation
dislocation defects
distributed
dual
employed
energy
energy band
energy bandgap
epitaxy
equilibrium
form
gaas
gaas substrate
gaas substrates
gaassb
gaassb layer
grading
grow
growing
iii-v
iii-v alloy
increases
intermediary
interval
junction
lattice
lattice constant
lattice matched
layer
liquid
liquid phase
matched
matched layer
obtain
optimized
peak
percent
phase
phase epitaxy
photovoltaic
photovoltaic device
procedure
reaches
sb
sb layer
smoothly
step
substrates
surface
transition
transition layer
uniformly
uniformly distribute
uniformly distributed
whereby
whereby dislocation
1-x
1-y
74
accomplished
algaassb
alloy
atomic
atomic percent
bandgap
compositional
compositional intermediary
concentration
constant
constant grading
constituent
cooling
cooling procedure
decreases
defects
desired
device
dislocation
dislocation defects
distributed
dual
employed
energy
energy band
energy bandgap
epitaxy
equilibrium
form
gaas
gaas substrate
gaas substrates
gaassb
gaassb layer
grading
grow
growing
iii-v
iii-v alloy
increases
intermediary
interval
junction
lattice
lattice constant
lattice matched
layer
liquid
liquid phase
matched
matched layer
obtain
optimized
peak
percent
phase
phase epitaxy
photovoltaic
photovoltaic device
procedure
reaches
sb
sb layer
smoothly
step
substrates
surface
transition
transition layer
uniformly
uniformly distribute
uniformly distributed
whereby
whereby dislocation