Lattice constant grading in the Al[sub y]Ga[sub 1[minus]y]As[sub 1[minus]x]Sb[sub x] alloy system
Patent
·
OSTI ID:7005366
Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5[mu]m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 eV for one junction of an optimized dual junction photovoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of the growing layer. 2 figs.
- Assignee:
- Varian Associates, Inc., Palo Alto, CA (United States)
- Patent Number(s):
- A; US 4246050
- Application Number:
- PPN: US 6-059705
- OSTI ID:
- 7005366
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALLOYS
ALUMINIUM ALLOYS
ANTIMONIDES
ANTIMONY ALLOYS
ANTIMONY COMPOUNDS
ARSENIC ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
EPITAXY
FABRICATION
GALLIUM ALLOYS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTIONS
LIQUID PHASE EPITAXY
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALLOYS
ALUMINIUM ALLOYS
ANTIMONIDES
ANTIMONY ALLOYS
ANTIMONY COMPOUNDS
ARSENIC ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
EPITAXY
FABRICATION
GALLIUM ALLOYS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTIONS
LIQUID PHASE EPITAXY
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS