Thin film tritium dosimetry
Patent
·
OSTI ID:862521
- Madison, WI
The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.
- Research Organization:
- Univ. of Wisconsin, Madison, WI (United States)
- DOE Contract Number:
- AT(11-1)-1105
- Assignee:
- United States of America as represented by United States Energy (Washington, DC)
- Patent Number(s):
- US 3955085
- OSTI ID:
- 862521
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thin film tritium dosimetry
Compton effect thermally activated depolarization dosimeter
Fast neutron activation dosimetry with TLDS
Patent
·
Tue May 04 00:00:00 EDT 1976
·
OSTI ID:862521
Compton effect thermally activated depolarization dosimeter
Patent
·
Sun Jan 01 00:00:00 EST 1978
·
OSTI ID:862521
Fast neutron activation dosimetry with TLDS
Technical Report
·
Wed Jan 01 00:00:00 EST 1975
·
OSTI ID:862521
Related Subjects
film
tritium
dosimetry
provides
method
dosimeter
comprising
material
relatively
sensitive
ritac-ritap
properties
exposed
radiation
removed
source
energy
electron
dose
deposited
determined
radiation-induced
thermally-activated
polarization
techniques
energy electron
dosimeter comprising
tritium dosimetry
/250/
tritium
dosimetry
provides
method
dosimeter
comprising
material
relatively
sensitive
ritac-ritap
properties
exposed
radiation
removed
source
energy
electron
dose
deposited
determined
radiation-induced
thermally-activated
polarization
techniques
energy electron
dosimeter comprising
tritium dosimetry
/250/