Thin film tritium dosimetry

Patent · 01 January 1976

OSTI ID:862521

Moran, Paul R ^[1]

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1. Madison, WI

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

• Research Organization: Wisconsin Univ., Madison (USA)
• Assignee: United States of America as represented by United States Energy (Washington, DC)
• Patent Number(s): US 3955085
• OSTI ID: 862521
• Country of Publication: United States
• Language: English

Related Subjects

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comprising
deposited
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dose
dosimeter
dosimeter comprising
dosimetry
electron
energy
energy electron
exposed
film
material
method
polarization
properties
provides
radiation
radiation-induced
relatively
removed
ritac-ritap
sensitive
source
techniques
thermally-activated
tritium
tritium dosimetry