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Title: Thin film tritium dosimetry

Patent ·
OSTI ID:862521

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

Research Organization:
Univ. of Wisconsin, Madison, WI (United States)
DOE Contract Number:
AT(11-1)-1105
Assignee:
United States of America as represented by United States Energy (Washington, DC)
Patent Number(s):
US 3955085
OSTI ID:
862521
Country of Publication:
United States
Language:
English