Epitaxial condition and polarity in GaN grown on a HfN-bufferedSi(111) wafer
No abstract prepared.
- Research Organization:
- Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Sciences and Engineering Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 862181
- Report Number(s):
- LBNL--58302; BnR: KC0201010
- Journal Information:
- Applied Physical Letters, Journal Name: Applied Physical Letters Vol. 86
- Country of Publication:
- United States
- Language:
- English
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