ScanningTunneling Luminescence of Grain Boundaries in Cu(In,Ga)Se2
At the Laboratory, photon emission in semiconductors has been mapped in the nanoscale using scanning tunneling microscopy (STM). In this Solar Program Review Meeting, we report on the latest results obtained in Cu(In,Ga)Se2 (CIGS) thin films by this adapted STM. Scanning tunneling luminescence (STL) spectroscopy suggests that photons are emitted near the surface of CIGS. STL is excited either by (1) diffusion of tunneling electrons and subsequent recombination with available holes in CIGS or (2) impact ionization by hot electrons. Which process becomes predominant depends on the voltage applied to the STM tip. Photon mapping shows electronically active, extended defects near the surface of CIGS thin films.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 860489
- Report Number(s):
- NREL/CP-520-36975
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
DEFECTS
DIFFUSION
ELECTRONS
FILMS
GRAIN BOUNDARIES
IONIZATION
LUMINESCENCE
NANOSCALE
PHOTON
PHOTON EMISSION
PHOTONS
PV
RECOMBINATION
SCANNING TUNNELING LUMINESCENCE (STL)
SCANNING TUNNELING MICROSCOPY
SCANNING TUNNELING MICROSCOPY (STM)
SOLAR ENERGY
SPECTROSCOPY
Solar Energy - Photovoltaics
THIN FILMS
TUNNELING