Direct sublattice imaging of semiconductor materials
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6031 (United States)
By employing the technique of Z-contrast imaging in a 300 kV scanning transmission electron microscope, we show that it is possible to obtain directly interpretable, atomic resolution images of interface structures in semiconductor materials. With particular emphasis on the study of the CdTe/GaAs(001) system, we demonstrate that such an approach enables the direct observation of the sublattice in compound semiconductors and, as a direct consequence of this, facilitates the observation of atomic arrangements (in some cases unexpected) at dislocation cores on the column-by-column level. In addition, we demonstrate that the technique can also be applied to the study of grain boundary structures, by showing examples taken from boundaries in Si and SrTiO{sub 3}. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}
- OSTI ID:
- 83919
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 13; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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