Direct atomic resolution imaging of dislocation core structures in a 300 kV stem

Technical Report · Mon May 01 00:00:00 EDT 1995

DOI:https://doi.org/10.2172/102250· OSTI ID:102250

McGibbon, A J ^[1]; Pennycook, S J ^[2]

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1. Univ. of Glasgow (United Kingdom). Dept. of Physics and Astronomy
2. Oak Ridge National Lab., TN (United States). Solid State Div.

By employing the incoherent imaging technique of Z-contrast imaging in a 300kV STEM, the authors show that it is possible to provide directly interpretable, atomic resolution images of the sublattice in compound semiconductors. Using this approach, analysis of dislocations at an interface in the CdTe(001)/GaAs(001) system reveals unexpected core structures at Lomer dislocations.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Oak Ridge Inst. for Science and Education, TN (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 102250
• Report Number(s): CONF-9503125--3; ON: DE95017422
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
DISLOCATIONS
ELECTRON MICROSCOPY
ELECTRONIC STRUCTURE
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HETEROJUNCTIONS
IMAGES
INTERFACES
SEMICONDUCTOR MATERIALS