Direct observation of dislocation core structures in CdTe/GaAs(001)
- Oak Ridge National Lab., TN (United States)
- Sandia National Labs., Livermore, CA (United States)
A strategy is presented for determining sublattice polarity at defects in compound semiconductors. Core structures of 60-degree and Lomer dislocations in the CdTe/GaAs(001) system have been obtained by the application of maximum-entropy analysis to Z-contrast images (Z is atomic number) obtained in a 300-kilovolt scanning transmission electron microscope. Sixty-degree dislocations were observed to be of the glide type, whereas in the case of Lomer dislocations, both a symmetric (Hornstra-like) core and an unexpected asymmetric structure made up of a fourfold ring were seen. 23 refs., 3 figs.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-84OR21400; AC04-94AL85000
- OSTI ID:
- 102982
- Journal Information:
- Science, Journal Name: Science Journal Issue: 5223 Vol. 269; ISSN SCIEAS; ISSN 0036-8075
- Country of Publication:
- United States
- Language:
- English
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