Determination of free carrier concentration in {ital n}-GaInP alloy by Raman scattering

Journal Article · Tue Aug 15 04:00:00 EDT 1995 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.360715· OSTI ID:83904

Sinha, K; Mascarenhas, A; Kurtz, S R; Olson, J M ^[1]

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1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

We present results of Raman scattering from coupled phonon-plasmon modes in Se-doped {ital n}-Ga{sub 0.52}In{sub 048}P alloy. Due to the small energy separation between the {Gamma}- and the {ital L}-point conduction-band minima for this alloy composition, a significant fraction of the free carriers at room temperature are present in the {ital L}-conduction-band valley, giving rise to a multicomponent plasma. The carrier concentrations extracted from the Raman spectra for the different epilayers are in good agreement with the free electron concentrations determined by capacitance-voltage measurements. We employ the light scattering technique to extract the carrier concentration in the {ital n}-type emitter layer of a GaInP-based solar cell. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: National Renewable Energy Laboratory
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 83904
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 78; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CHARGE CARRIERS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
N-TYPE CONDUCTORS
PHONONS
PLASMONS
RAMAN SPECTRA
SOLAR CELLS