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X-ray microdiffraction: Local stress distributions in polycrystalline and epitaxial thin films

Journal Article · · Microelectronic Engineering

When investigated by X-ray microdiffraction, the stress states in thin metal films are found to be more complex than as assumed by the simple models that have been formulated to describe their behavior. In this paper, the local differences in stress have been measured in a polycrystalline Al(0.5 wt percent Cu) film on Si and an epitaxial Cu film on Al2O3. Significant differences in stress state are apparent between grains, but also within grains. While both types of film display a local variation in residual stress state, the width of the distribution is much broader in the polycrystalline film. The reasons for this are discussed in terms of grain size distribution and dislocation nucleation.

Research Organization:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Organization:
USDOE Director. Office of Science. Office of Basic Energy Sciences. Materials Science and Engineering Division (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
837410
Report Number(s):
LBNL--55889
Journal Information:
Microelectronic Engineering, Journal Name: Microelectronic Engineering Journal Issue: 1 Vol. 75; ISSN 0167-9317
Country of Publication:
United States
Language:
English

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