Inversion domains in AlN grown on (0001) sapphire
- LBNL Library
Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US) (US)
- Sponsoring Organization:
- US Department of Energy; Air Force Scientific Research Laboratory Order FQ86710200852 (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 833701
- Report Number(s):
- LBNL--53628
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 83; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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