Analysis of low Z elements on Si wafer surfaces with synchrotron radiation induced total reflection x-ray fluorescence at SSRL, beamline3-3: comparison of droplets with spin coated wafers
Journal Article
·
· Spectrochimica Acta, Part B (Atomic Spectroscopy)
- SLAC
No abstract prepared.
- Research Organization:
- Stanford Linear Accelerator Center, Menlo Park, CA (US)Stanford Synchrotron Radiation Laboratory (US)
- Sponsoring Organization:
- USDOE Office of Science (US)
- DOE Contract Number:
- AC03-76SF00515
- OSTI ID:
- 831658
- Report Number(s):
- SLAC-REPRINT-2003-295
- Journal Information:
- Spectrochimica Acta, Part B (Atomic Spectroscopy), Journal Name: Spectrochimica Acta, Part B (Atomic Spectroscopy) Vol. 8
- Country of Publication:
- United States
- Language:
- English
Similar Records
Background spectrum of synchrotron radiation -excited total reflection x-ray fluorescence for Si wafer analysis
Synchrotron radiation excited total reflection x-ray fluorescence quantitative analysis of Si wafer by absolute fluorescence intensity calculation
Synchrotron radiation excited total reflection x-ray fluorescence quantitative analysis of Si wafer by absolute fluorescence intensity calculation
Journal Article
·
Mon Jul 16 00:00:00 EDT 2001
· X-Ray Spectrometry
·
OSTI ID:785317
Synchrotron radiation excited total reflection x-ray fluorescence quantitative analysis of Si wafer by absolute fluorescence intensity calculation
Journal Article
·
Sat Jun 16 00:00:00 EDT 2001
· Materials Letters
·
OSTI ID:787011
Synchrotron radiation excited total reflection x-ray fluorescence quantitative analysis of Si wafer by absolute fluorescence intensity calculation
Journal Article
·
Sat Jun 16 00:00:00 EDT 2001
· Materials Letters
·
OSTI ID:787154