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Structural Properties of InAs Nanocrystals Formed by Sequential Implantation of In and As Ions in the Si (100) Matrix

Journal Article · Tue Oct 15 00:00:00 EDT 2002 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1507822· OSTI ID:829498

Tchebotareva, A ^[1]

ORNL

No abstract prepared.

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Research Organization:: ORNL Oak Ridge National Laboratory

Sponsoring Organization:: DOE

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 829498

Report Number(s):: P02-113640

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 92; ISSN JAPIAU; ISSN 0021-8979

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ARSENIC IONS
INDIUM ARSENIDES
INDIUM IONS
ION IMPLANTATION
MATRIX MATERIALS
MORPHOLOGY
NANOSTRUCTURES
SILICON