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Properties of InAs Nanocrystals in Silicon Formed by Sequential Ion Implantation

Journal Article · Thu Dec 31 23:00:00 EST 1998 · Nuclear Instruments and Methods in Physics Research, Section B

DOI:https://doi.org/10.1016/S0168-583X(98)00704-6· OSTI ID:814113

Tchebotareva, A L ^[1]

ORNL

No abstract prepared.

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Research Organization:: ORNL Oak Ridge National Laboratory (US)

Sponsoring Organization:: US Department of Energy (US)

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 814113

Report Number(s):: P00-108923

Journal Information:: Nuclear Instruments and Methods in Physics Research, Section B, Journal Name: Nuclear Instruments and Methods in Physics Research, Section B Journal Issue: 1-4 Vol. 148; ISSN 0168-583X; ISSN NIMBEU

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ION IMPLANTATION
ORNL
SILICON