Deposition and characterization of photoconductive PZT thin films
- Northern Illinois Univ., DeKalb, IL (United States). Dept. of Chemistry
- Aerospace Corp., Los Angeles, CA (United States)
Deposition by the aqueous acetate solution (DAAS) technique was used to synthesize highly crystalline thin films of undoped and 2% iron-doped Pb(Zr{sub 0.53}Ti{sub 0.47})O{sub 3} [PZT (53,47)] perovskites on sapphire and Pt substrates at 600 C. Fe ions were added either at the precursor stage or diffused thermally. The crystallization of the films was measured by X-ray diffraction. The ferroelectric activity was examined by polarization-voltage hysteresis (P-E) loops. The electro-optical properties of ferroelectric/photoconductive PZT thin films were investigated by excitation photocurrent spectroscopy (EPS) and 77 K emission spectroscopy. The photoconductivity measured at visible wavelengths was enhanced for the thermally diffused, but not the precursor-processed doped materials. This, together with lattice parameters obtained from X-ray data and P-E hysteresis loop measurements, suggested that the precursor-processed doped ions are strongly bonded in the perovskite lattice, whereas the thermally diffused ions are bound more weakly in the grain boundaries.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 82924
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 6 Vol. 142; ISSN JESOAN; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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