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Deposition and characterization of photoconductive PZT thin films

Journal Article · · Journal of the Electrochemical Society
DOI:https://doi.org/10.1149/1.2044222· OSTI ID:82924
; ;  [1]; ;  [2]
  1. Northern Illinois Univ., DeKalb, IL (United States). Dept. of Chemistry
  2. Aerospace Corp., Los Angeles, CA (United States)

Deposition by the aqueous acetate solution (DAAS) technique was used to synthesize highly crystalline thin films of undoped and 2% iron-doped Pb(Zr{sub 0.53}Ti{sub 0.47})O{sub 3} [PZT (53,47)] perovskites on sapphire and Pt substrates at 600 C. Fe ions were added either at the precursor stage or diffused thermally. The crystallization of the films was measured by X-ray diffraction. The ferroelectric activity was examined by polarization-voltage hysteresis (P-E) loops. The electro-optical properties of ferroelectric/photoconductive PZT thin films were investigated by excitation photocurrent spectroscopy (EPS) and 77 K emission spectroscopy. The photoconductivity measured at visible wavelengths was enhanced for the thermally diffused, but not the precursor-processed doped materials. This, together with lattice parameters obtained from X-ray data and P-E hysteresis loop measurements, suggested that the precursor-processed doped ions are strongly bonded in the perovskite lattice, whereas the thermally diffused ions are bound more weakly in the grain boundaries.

Sponsoring Organization:
USDOE
OSTI ID:
82924
Journal Information:
Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 6 Vol. 142; ISSN JESOAN; ISSN 0013-4651
Country of Publication:
United States
Language:
English