Enhanced hysteresis in the semiconducting-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation.
Journal Article
·
· Applied Physics Letters
OSTI ID:829186
No abstract prepared.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 829186
- Report Number(s):
- P01-111137; APPLAB; TRN: US200610%%465
- Journal Information:
- Applied Physics Letters, Vol. 79; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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