V-shaped inversion domains in InN grown on c-plane sapphire

Journal Article · Tue Apr 27 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1772863· OSTI ID:828734

Jasinski, J ^[1]; Liliental-Weber, Z; Lu, H; Schaff, W J

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1. LBNL Library

Inversion domains with a V-shape were found to nucleate inside a Mg-doped InN heteroepitaxial layer. They resemble Al-polarity domains, observed recently, in N-polarity AlN films. However, the angle between the side-walls of the V-shaped domain and the c-axis differs in these two cases. In InN, this angle is almost two times bigger than that reported for AlN. The origin of V-shaped inversion domains in InN film is not yet clear.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director. Office of Science. Office of Basic Energy Sciences (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 828734
• Report Number(s): LBNL--54953
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 85; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
LAWRENCE BERKELEY LABORATORY
ORIGIN
SAPPHIRE