Point defects in electron-irradiated oxide single crystals

Journal Article · Sat Apr 01 04:00:00 EST 1995 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/j.1151-2916.1995.tb08436.x· OSTI ID:82600

Caulfield, K J; Cooper, R ^[1]; Boas, J F ^[2]

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1. Univ. of Melbourne, Parkville, Victoria (Australia). Dept. of Chemistry
2. Australian Radiation Lab., Yallambie, Victoria (Australia)

Point defects have been produced in CaO, MgO, and {alpha}-Al{sub 2}O{sub 3} single crystals by electron irradiation, and thresholds for atomic displacement have been measured using time-resolved luminescence spectroscopy. Oxygen displacement energies of approximately 50 eV have been determined; however, a temperature-dependent threshold observed for an emission band in MgO may arise from a magnesium displacement. A 300-nm emission in {alpha}-Al{sub 2}O{sub 3} may be due to an F-center transition. Studies of radiative recombination kinetics are consistent with an electron-detrapping model.

• Sponsoring Organization: USDOE
• OSTI ID: 82600
• Journal Information: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Journal Issue: 4 Vol. 78; ISSN 0002-7820; ISSN JACTAW
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ATOMIC DISPLACEMENTS
CALCIUM OXIDES
DAMAGE
ELECTRON BEAMS
LUMINESCENCE
MAGNESIUM OXIDES
MATHEMATICAL MODELS
POINT DEFECTS
SPECTROSCOPY