AlN grown by metalorganic molecular beam epitaxy
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Hughes Research Lab., Malibu, CA (United States)
Thin film AlN has been grown on Al{sub 2}O{sub 3} and GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) using amine bonded alane precursors, tertiarybutylamine, and nitrogen from a compact electron cyclotron resonance (ECR) plasma source operating at 2.45 GHz. Typical growth pressures were in the 0.5--1 {times} 10{sup {minus}4} Torr range. The growth rates, impurity backgrounds and surface morphologies were examined for both nitrogen sources and both the solid and liquid alanes. In general, growth efficiencies were good for both alane precursors, allowing for deposition of the low temperature, {approximately} 400 C, AlN buffers needed for subsequent growth of GaN and InGaAlN alloys. Low growth temperatures could not be obtained using tertiarybutylamine, presumably due to poor decomposition efficiency of the source at low temperatures. The structural quality of material grown at high temperatures from the ECR plasma was measured by atomic force microscopy (AFM) and high resolution x-ray diffraction (HRXRD), indicating a surface roughness of {approximately} 8 {angstrom} and an x-ray full width half maximum (FWHM) of 430 arcsec.
- OSTI ID:
- 82570
- Report Number(s):
- CONF-941144--; ISBN 1-55899-264-2
- Country of Publication:
- United States
- Language:
- English
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