Growth mechanism of AlN by metal-organic molecular beam epitaxy
- Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)
The phenomena that accompany the growth of aluminum nitride (AlN) by metal-organic molecular beam epitaxy with trimethylaluminum and ammonia as sources of aluminum and nitrogen, respectively, have been systematically investigated. Optimizing the growth temperature, flux ratios, and the ammonia injector temperature, we obtained an efficient growth with a rate of 500 nm/h and a low consumption of ammonia. Layers of AlN with x-ray diffraction linewidth as low as 141 arcsec for the (0002) reflection, and 800 arcsec for the (11-24) reflection are demonstrated on Si(111) substrates. High temperatures of ammonia injector result in lower growth rates but facilitate transition to the two-dimensional growth. These phenomena are discussed in terms of surface hydrogen, manifested through surfactant effect, and passivation of nitrogen bonds.
- OSTI ID:
- 20658092
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 96; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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