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Diluted II-VI oxide semiconductors with multiple band gaps

Journal Article · Wed Jul 23 04:00:00 EDT 2003 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.91.246403· OSTI ID:823220

Yu, K M ^[1]; Walukiewicz, W; Wu, J; Shan, W; Beeman, J W; Scarpulla, M A; Dubon, O D; Becla, P

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: USDOE Director. Office of Science. Basic Energy Sciences. Division of Materials Sciences and Engineering; NSF Graduate Research Fellowship (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 823220

Report Number(s):: LBNL--53472

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 24 Vol. 9124; ISSN 0031-9007; ISSN PRLTAO

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ENERGY GAP
OXIDES
SEMICONDUCTOR MATERIALS