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Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries

Journal Article · Mon Feb 21 04:00:00 EST 2000 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.85.1552· OSTI ID:767575

Walukiewicz, W ^[1]; Shan, W; Yu, K M; Ager, III, J W; Haller, E E; Miotkowski, I; Seong, M J; Alawadhi, H; Ramdas, A K

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 767575

Report Number(s):: LBNL--45262

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 7 Vol. 85; ISSN 0031-9007; ISSN PRLTAO

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ELECTRONIC STRUCTURE
ENERGY GAP
SEMICONDUCTOR MATERIALS
TERNARY ALLOY SYSTEMS