Boundary-structure determination of Ag/Si(111) interfaces by x-ray diffraction
- Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902 (United States)
- University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902 (United States)
- Department of Physics, National Chiao-Tung University, Hsinchu, Taiwan (Taiwan, Province of China)
- Metals and Ceramics Division, Oak Ridge Institute for Science Education, Oak Ridge, Tennessee 37831 (United States)
Different Ag/Si(111) systems have been examined using synchrotron x-ray diffraction. Multi-atomic-layer deposition of Ag onto a Si(111)-(7{times}7) surface maintained at room temperature results in an unstrained, (111)-oriented film. The interface shows a Ag-modified (7{times}7) structure which when annealed above 200--250 {degree}C transforms to a (1{times}1) structure. Although this is near the characteristic temperature for formation of the ({radical}3 {times} {radical}3 ){ital R}30{degree} surface reconstruction commonly observed for a monolayer of Ag adsorbed on Si(111), no evidence of this ({radical}3 {times} {radical}3 ){ital R}30{degree} reconstruction was found at the interface. A Ag monolayer ({radical}3 {times} {radical}3) {ital R}30{degree} surface, further covered by multilayer Ag deposition at room temperature, also shows no indication of the ({radical}3 {times} {radical}3) {ital R}30{degree} reconstruction at the interface. This indicates that the actual interface structure may or may not be related to the clean or adsorbed layer structures. The structure of the Ag-Si interface was further characterized by scans of the crystal truncation rods. Both the (7{times}7) interface prepared by room-temperature deposition and the annealed (1{times}1) interface show fairly sharp boundaries. The results suggest some intermixing occurs at the monolayer level for the annealed interface. The structure of the Ag film was also investigated.
- Research Organization:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- DOE Contract Number:
- FG02-91ER45439; AC02-76CH00016; AC05-84OR21400
- OSTI ID:
- 82242
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 52, Issue 3; Other Information: PBD: 15 Jul 1995
- Country of Publication:
- United States
- Language:
- English
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