Picosecond Response of Gallium-Nitride Metal-Semiconductor-Metal Photodetectors

Journal Article · Mon Mar 22 00:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1688454· OSTI ID:822126

Li, J; Xu, Y; Hsiang, T Y; Donaldson, W R

OAK-(B204)Metal-semiconductor-metal ultraviolet photodiodes fabricated on GaN were tested in the picosecond regime with an electro-optic sampling system. The best performance of a device with a feature size of 1 mm showed a 1.4-ps rise time and 3.5-ps full width at half maximum, which represents the fastest ultraviolet GaN photodiode reported to date. The derived electron velocity in GaN was in good agreement with an independent photo-excitation measurement. A comparison with Monte Carlo simulation was made, and slower impulse response observed in a device with a smaller feature size of 0.5 mm was discussed.

• Research Organization: Laboratory for Laser Energetics (US)
• Sponsoring Organization: (US)
• DOE Contract Number: FC03-92SF19460
• OSTI ID: 822126
• Report Number(s): DOE/SF-19460-524; 1435; 2003-175; TRN: US200412%%510
• Journal Information: Applied Physics Letters, Vol. 84, Issue 12; Other Information: Submitted to Applied Physics Letters: Volume 84, No.12; PBD: 22 Mar 2004
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
PERFORMANCE
PHOTODETECTORS
PHOTODIODES
PULSE RISE TIME
COMPUTERIZED SIMULATION
GALLIUM NITRIDES
ULTRAVIOLET RADIATION