A 75 GHz silicon metal-semiconductor-metal Schottky photodiode
- Laboratory for Laser Energetics and Department of Electrical Engineering,University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States)
- Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro-optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light-intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed-limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths.
- DOE Contract Number:
- FC03-92SF19460
- OSTI ID:
- 6599335
- Journal Information:
- Applied Physics Letters; (United States), Vol. 62:20; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
PHOTODETECTORS
PERFORMANCE
PULSE RISE TIME
SCHOTTKY BARRIER DIODES
SILICON
SPECTRAL RESPONSE
ULTRAVIOLET RADIATION
VISIBLE RADIATION
ELECTROMAGNETIC RADIATION
ELEMENTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
TIMING PROPERTIES
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments