Diluted magnetic semiconductors formed by an ion implantation and pulsed-laser melting
- LBNL Library
Using ion implantation followed by pulsed-laser melting (PLM), we have synthesized ferromagnetic films of Ga{sub 1-x}Mn{sub x}As. Ion-channeling experiments reveal that these films are single crystalline and have high Mn substitutionality while variable temperature resistivity measurements reveal the strong Mn-hole interactions characteristic of carrier-mediated ferromagnetism in homogeneous DMS's. We have observed Curie temperatures (T{sub C}'s) of approximately 80 K for films with substitutional Mn concentrations of x=0.04. The use of n-type counter doping as a means of increasing Mn substitutionality and T{sub c} is explored by co-implantation of Mn and Te into GaAs. In Ga{sub 1-x}Mn{sub x}P samples synthesized using our technique, the implanted layer regrows as an epitaxial single crystal capped by a highly defective surface layer. These samples display ferromagnetism with T{sub c} {approx} 23 K.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director. Office of Science. Basic Energy Sciences (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 817251
- Report Number(s):
- LBNL--53833
- Country of Publication:
- United States
- Language:
- English
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