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Pixel multichip module design for a high energy physics experiment

Conference ·
OSTI ID:817008

At Fermilab, a pixel detector multichip module is being developed for the BTeV experiment. The module is composed of three layers. The lowest layer is formed by the readout integrated circuits (ICs). The back of the ICs is in thermal contact with the supporting structure, while the top is flip-chip bump-bonded to the pixel sensor. A low mass flex-circuit interconnect is glued on the top of this assembly, and the readout IC pads are wire-bounded to the circuit. This paper presents recent results on the development of a multichip module prototype and summarizes its performance characteristics.

Research Organization:
Fermi National Accelerator Lab., Batavia, IL (US)
Sponsoring Organization:
USDOE Office of Energy Research (ER) (US)
DOE Contract Number:
AC02-76CH03000
OSTI ID:
817008
Report Number(s):
FERMILAB-Conf-03/360-E
Country of Publication:
United States
Language:
English

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