Mutual passivation of group IV donors and isovalent nitrogen in diluted GaN{sub x}As{sub 1-x} alloys

Conference · Wed Jul 23 04:00:00 EDT 2003

OSTI ID:816786

Yu, K M ^[1]; Wu, J; Walukiewicz, W; Shan, W; Beeman, J; Mars, D E; Chamberlin, D R; Scarpulla, M A; Dubon, O D; Ridgway, M C; Geisz, J F

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1. LBNL Library

We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaN{sub x}As{sub 1-x} alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IV{sub Ga}-N{sub As} pairs. In Si doped GaInN{sub 0.017}As{sub 0.983} the electron concentration starts to decrease rapidly at an annealing temperature of 700 C from {approx} 3 x 10{sup 19}cm{sup -3} in the as-grown state to less than 10{sup 16}cm{sup -3} after an annealing at 900 C for 10 s. At the same time annealing of this sample at 950 C increases the gap by about 35 meV, corresponding to a reduction of the concentration of the active N atoms by an amount very close to the total Si concentration. We also show that the formation of Si{sub Ga}-N{sub As} pairs is controlled by the diffusion of Si via Ga vacancies to the nearest N{sub As} site. The general nature of this mutual passivation effect is confirmed by our study of Ge doped GaN{sub x}As{sub 1-x} layers formed by N and Ge co-implantation in GaAs followed by pulsed laser melting.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director, Office of Science. Basic Energy Sciences (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 816786
• Report Number(s): LBNL--53490
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOY SYSTEMS
ALLOYS
ANNEALING
ATOMS
DEFECTS
DIFFUSION
ELECTRONS
LASERS
MELTING
NITROGEN
PASSIVATION
VACANCIES