Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source

Conference · Mon Apr 15 04:00:00 EDT 2002

OSTI ID:813570

Armitage, Rob ^[1]; Yang, Qing; Feick, Henning; Park, Yeonjoon; Weber, Eicke R

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1. LBNL Library

Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (>5 x 10{sup 20} cm{sup -3}) were actually n-type rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow ({approx}6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director, Office of Science. Office of Basic Energy Sciences (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 813570
• Report Number(s): LBNL--52187
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON
CARBON TETRACHLORIDE
EPITAXY
EXCITONS
GAN CARBON DOPING
LUMINESCENCE
OPTICAL PROPERTIES
PHOTOLUMINESCENCE