Annealing study of ion implanted MOCVD and MBE grown GaN
Book
·
OSTI ID:395036
- Air Force Inst. of Tech., Wright-Patterson AFB, OH (United States)
- APA Optics, Blaine, MN (United States)
- Wright Lab., Wright-Patterson AFB, OH (United States)
MOCVD and MBE grown GaN were implanted with Ar, Mg, Si, Be, C, and O, and annealed in a conventional oven under flowing NH{sub 3} or N{sub 2} gas. Absorption measurements confirmed that implantation damage was annealed out after 90 minutes at a temperature of 1,000 C. Surface damage caused by NH{sub 3} annealing was evident in absorption and photoluminescence measurements for annealing temperatures of over 1,000 C. Although most of the implants showed no unique luminescence peaks, systematic changes in the relative intensities of the exciton, donor-acceptor pair, and yellow peaks were noted. The Mg implanted samples showed evidence of the acceptor bound exciton line at 3.44 eV, and a unique peak at 3.3 eV possibly due to a Mg free-to-bound transition.
- OSTI ID:
- 395036
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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