A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy

Conference · Sat Jul 01 04:00:00 EDT 2000

OSTI ID:20104618

Bell, A; Harrison, I; Korakakis, D; Larkins, E C; Hayes, J M; Kuball, M

Photoluminescence (PL) spectroscopy has been used to investigate the effect annealing has on molecular beam epitaxially grown GaN in different ambients. By observing the changes in the PL spectra as a function of ambient temperature and atmosphere used, important information concerning the origin of defects within GaN has been found. Samples were annealed in different atmospheres (including oxygen, oxygen and water vapor, nitrogen and argon), different temperatures. In the 2.0 eV--2.8 eV region of the PL spectra, two peaks appeared at approximately 2.3 eV and 2.6 eV, somewhat higher than the usual yellow luminescence peak. The authors find that the 2.6 eV peak is dominant for high annealing temperatures and the 2.3 eV peak dominates at low annealing temperatures for the samples annealed in oxygen. When annealed in argon and nitrogen the 2.6 eV peak dominates at all annealing temperatures. Changes in the PL spectra between anneals were also seen in the 3.42 eV region. The 3.42 eV peak is often assigned to excitons bound to stacking faults. Power resolved measurements indicate that in the sample the cause is a donor acceptor pair transition.

• Research Organization: Univ. of Nottingham (GB)
• OSTI ID: 20104618
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARGON
EXPERIMENTAL DATA
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
NITROGEN
OXYGEN
PHOTOLUMINESCENCE
SPECTROSCOPY
THIN FILMS