Very Fast Metal-Semiconductor-Metal Ultraviolet Photodetectors on GaN with Submicron Finger Width

Journal Article · Wed Jul 30 00:00:00 EDT 2003 · IEEE Photonics Technology Letters

OSTI ID:812543

Li, J; Donaldson, W R; Hsiang, T Y

(B204)We measured, in the time domain, fast metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN with finger width and pitch ranging from 0.3 micronmeters to 5 micronmeters. A fast circuit was designed to couple out the short electrical pulse. The minimum temporal resolution between consecutive optical pulses is 26 ps. At low illumination levels, the bandwidth of the response is limited by the measurement system, not the device. At high illuminations, recovery of diode becomes slower, consistent with the space-charge screening effect caused by the photo-generated carriers.

• Research Organization: Laboratory for Laser Energetics (US)
• Sponsoring Organization: (US)
• DOE Contract Number: FC03-92SF19460
• OSTI ID: 812543
• Report Number(s): DOE/SF-19460-496; 1397; 2002-146; TRN: US200316%%308
• Journal Information: IEEE Photonics Technology Letters, Vol. 15, Issue 8; Other Information: Submitted to IEEE Photonics Technology Letters; Volume 15, No.8 (30 Jul 2003); PBD: 30 Jul 2003
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ILLUMINANCE
PHOTODETECTORS
GALLIUM NITRIDES
ULTRAVIOLET RADIATION
TIME RESOLUTION
SEMICONDUCTOR DIODES
SCHOTTKY DIODES
UHF DEVICES
HIGH-SPEED ELECTRONICS
SEMICONDUCTORS DEVICE PACKAGING