Residual stress mapping by micro X-ray diffraction: Application to the study of thin film buckling
- LBNL Library
Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of spontaneous detachment of the film from its substrate and in the case of compressive stresses, thin film buckling. Although these effects are undesirable for future applications, one may take benefit of it for thin film mechanical properties investigation. Since the 80's, a lot of theoretical works have been done to develop mechanical models with the aim to get a better understanding of driven mechanisms giving rise to this phenomenon and thus to propose solutions to avoid such problems. Nevertheless, only a few experimental works have been done on this subject to support these theoretical results and nothing concerning local stress/strain measurement mainly because of the small dimension of the buckling (few tenth mm). This paper deals with the application of micro beam x-ray diffraction available on synchrotron radiation sources for stress/ strain mapping analysis of gold thin film buckling.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 807427
- Report Number(s):
- LBNL--51710; B& R KC0204016
- Journal Information:
- Journal de Physique IV France, Journal Name: Journal de Physique IV France Vol. 12
- Country of Publication:
- United States
- Language:
- English
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