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HIGH CHARGE EFFECTS IN SILICON DRIFT DETECTORS WITH LATERAL CONFINEMENT OF ELECTRONS.

Conference ·
OSTI ID:806861
 [1];
  1. BROOKHAVEN NATIONAL LABORATORY
A new drift detector prototype which provides suppression of the lateral diffusion of electrons has been tested as a function of the signal charge up to high charge levels, when electrostatic repulsion is not negligible. The lateral diffusion of the electron cloud has been measured for injected charges up to 2 {center_dot} 10{sup 5} electrons. The maximum number of electrons for which the suppression of the lateral spread is effective is obtained.
Research Organization:
Brookhaven National Lab., Upton, NY (US)
Sponsoring Organization:
USDOE Office of Energy Research (ER) (US)
DOE Contract Number:
AC02-98CH10886
OSTI ID:
806861
Report Number(s):
BNL--69558; KA0404
Country of Publication:
United States
Language:
English

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