Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces
Journal Article
·
· Journal of Vacuum Science and Technology B: Microelect. & Nanometer Structures
- LBNL Library
No abstract prepared.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Lab., Advanced Light Source, Berkeley, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 800259
- Report Number(s):
- LBNL/ALS--1750
- Journal Information:
- Journal of Vacuum Science and Technology B: Microelect. & Nanometer Structures, Journal Name: Journal of Vacuum Science and Technology B: Microelect. & Nanometer Structures Journal Issue: 4 Vol. 17
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces. [GaN]
X-ray photoemission spectromicroscopy of GaN and AlGaN
Scaling relationships for analyzing kinetics in GaN epitaxial lateral overgrowth.
Conference
·
Thu Jul 01 00:00:00 EDT 1999
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
·
OSTI ID:6174164
X-ray photoemission spectromicroscopy of GaN and AlGaN
Journal Article
·
Tue Mar 31 23:00:00 EST 1998
· Materials Research Society Symposium Proceedings
·
OSTI ID:800256
Scaling relationships for analyzing kinetics in GaN epitaxial lateral overgrowth.
Journal Article
·
Thu May 01 00:00:00 EDT 2003
· Proposed for publication in Journal of Crystal Growth.
·
OSTI ID:924202