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Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces. [GaN]

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
OSTI ID:6174164
 [1]; ;  [2]; ; ;  [1];  [3]
  1. Physics Department, Montana State University, Bozeman, Montana 59717 (United States)
  2. Department of Electrical and Computer Engineering, University of Wisconsin--Madison, Madison, Wisconsin 53706 (United States)
  3. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)

Photoemission spectromicroscopy is employed to investigate the inhomogeneities of surface electronic structures of epitaxial lateral overgrowth GaN material. The image, acquired on a clean surface, shows the surface morphology and agrees with the atomic force microscopy image. The dominant contrast mechanism is attributed to the angular dependence of the quantum yield for regions at different angles. Energy distribution curves localized to a submicron region for the Ga [ital 3d] core level demonstrate that growth-front areas have different Fermi level pinning behavior compared with window areas and overgrowth regions. The sample exposed to atomic hydrogen shows the same Fermi level position for all areas of the surface. Photoemission spectromicroscopy reveals island formation when about 10 monolayers of Mg is deposited on the surface. [copyright] [ital 1999 American Vacuum Society.]

OSTI ID:
6174164
Report Number(s):
CONF-990138--
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Vol. 17:4; ISSN 0734-211X; ISSN JVTBD9
Country of Publication:
United States
Language:
English