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Title: High-resolution x-ray study of thin GaN film on SiC

Journal Article · · J. Appl. Phys.
DOI:https://doi.org/10.1063/1.1364644· OSTI ID:796693

No abstract prepared.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
Sponsoring Organization:
USDOE Office of Energy Research (ER) (US)
DOE Contract Number:
AC02-98CH10886
OSTI ID:
796693
Journal Information:
J. Appl. Phys., Vol. 89, Issue 11; Other Information: PBD: 1 Jun 2001
Country of Publication:
United States
Language:
English