Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron X-ray diffraction

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.1477621· OSTI ID:795989

The availability of high brilliance synchrotron sources, coupled with recent progress in achromatic focusing optics and large area 2D detector technology, have allowed us to develop an X-ray synchrotron technique capable of mapping orientation and strain/stress in polycrystalline thin films with submicron spatial resolution. To demonstrate the capabilities of this instrument, we have employed it to study the microstructure of aluminum thin film structures at the granular and subgranular level. Owing to the relatively low absorption of X-rays in materials, this technique can be used to study passivated samples, an important advantage over most electron probes given the very different mechanical behavior of buried and unpassivated materials.

Research Organization:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Organization:
USDOE Director, Office of Science. Office of Basic Energy Studies (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
795989
Report Number(s):
LBNL--49984
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 80; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English