Single event effects in the pixel readout chip for BTeV
Conference
·
OSTI ID:789373
- Fermilab
In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 {micro}m CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.
- Research Organization:
- Fermi National Accelerator Lab., Batavia, IL (US)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC02-76CH03000
- OSTI ID:
- 789373
- Report Number(s):
- FERMILAB-Conf-01/369-E
- Country of Publication:
- United States
- Language:
- English
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